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[Zr(acac)3(H2O)2]Cl for Deposition of Thin Film of ZrO2 by Ultrasonic Aerosol
Assisted Chemical Vapour Deposition
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Sonochemical Synthesis, Thermal Studies and X-ray Structure of Precursor
[Zr(acac)3(H2O)2]Cl for Deposition of Thin Film of ZrO2 by Ultrasonic Aerosol
Assisted Chemical Vapour Deposition

机译:前体
[Zr(acac) 3 (H 2 O) 2 ] Cl的声化学合成,热研究和X射线结构气溶胶
辅助化学气相沉积法沉积ZrO 2 薄膜

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摘要

A new precursor [Zr(acac)3(H2O)2]Cl was synthesized by Sonochemical technique and used to deposit thin ZrO2 film on quartz and ceramic substrate via ultrasonic aerosol assisted chemical vapour deposition (UAACVD) at 300 ∑C in oxygen environment followed by annealing of the sample for 2-3 minutes at 500 ∑C in nitrogen ambient. The molecular structure of the precursor determined by single crystal X-ray analysis revealed that the molecules are linked through intermolecular hydrogen bonds forming pseudo six and eight membered rings. DSC and TGA/FTIR techniques were used to determine thermal behavior and decomposition temperature of the precursor and nature of evolved gas products. The optical measurement of annealed ZrO2 film with tetragonal phase shows optical energy band gap of 5.01 eV. The particle size, morphology, surface structure and composition of deposited films were investigated by XRD, SEM and EDX.
机译:通过声化学法合成了一种新的前体[Zr(acac) 3 (H 2 O) 2 ] Cl,并用于沉积稀ZrO <在氧气环境中,通过超声气溶胶辅助化学气相沉积(UAACVD),在氧气中300 ∑C,在石英和陶瓷基板上形成SUB> 2 膜,然后在氮气中以500 ∑C的温度将样品退火2-3分钟。通过单晶X射线分析确定的前体的分子结构表明,这些分子通过分子间的氢键连接,形成假的六元和八元环。 DSC和TGA / FTIR技术用于确定前驱物的热行为和分解温度以及所产生气体产物的性质。具有四方相的退火ZrO2薄膜的光学测量显示出5.01 eV的光能带隙。通过XRD,SEM和EDX对沉积膜的粒径,形貌,表面结构和组成进行了研究。

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