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首页> 外文期刊>Journal of the Chilean Chemical Society >THEORETICAL STUDY ON THE ADDUCTS OF SF4 WITH AsF5 AND SbF5
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THEORETICAL STUDY ON THE ADDUCTS OF SF4 WITH AsF5 AND SbF5

机译:用AsF5和SbF5诱导SF4的理论研究。

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Two adducts SF4AsF5 and SF4SbF5 have been studied in this work. Their structures, thermodynamic functions, and heats of formation were studied using density functional theory (DFT) method in gas phase and using the force field method and the DFT GGA-RPBE method in crystal state. The obtained crystal structures have the P21lc space group. The lattice energies, sublimation enthalpies and heats of formation in crystal state were estimated. Based on the optimized crystal structures, the electronic energy band and density of state were predicted and the results indicate that they are semiconductors with the band gap between 2.3 ~ 2.5 eV.
机译:这项工作研究了两个加合物SF4AsF5和SF4SbF5。使用气相中的密度泛函理论(DFT)方法以及使用结晶态的力场方法和DFT GGA-RPBE方法研究了它们的结构,热力学函数和形成热。所获得的晶体结构具有P 21lc空间基团。估计了晶态的晶格能,升华焓和形成热。根据优化的晶体结构,预测了电子能带和态密度,结果表明它们是带隙在2.3〜2.5 eV之间的半导体。

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