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首页> 外文期刊>Journal of the Chilean Chemical Society >EFFECT OF CHLORIDE IONS ON THE STRUCTURAL, OPTICAL, MORPHOLOGICAL, AND ELECTROCHEMICAL PROPERTIES OF Cu2O FILMS ELECTRODEPOSITED ON FLUORINE-DOPED TIN OXIDE SUBSTRATE FROM A DMSO SOLUTION
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EFFECT OF CHLORIDE IONS ON THE STRUCTURAL, OPTICAL, MORPHOLOGICAL, AND ELECTROCHEMICAL PROPERTIES OF Cu2O FILMS ELECTRODEPOSITED ON FLUORINE-DOPED TIN OXIDE SUBSTRATE FROM A DMSO SOLUTION

机译:氯离子对在DMSO溶液中氟掺杂的二氧化锡基板上电沉积的Cu2O薄膜的结构,光学,形态和电化学性质的影响

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摘要

This study shows the results attained during the electrodeposition of Cu2O films on fluorine-doped tin oxide (FTO) substrate from a dimethyl sulfoxide (DMSO) solution in the presence of chloride ions. Before the film electrodeposition and in order to establish the best conditions for the Cu2O electrodeposition, a detailed electrochemical study of the precursors in the presence of chloride ions was performed. The voltammetric profiles obtained show significant differences compared to those previously obtained during the study of the Cu2O electrodeposition from a free-chloride DMSO solution. These differences are the result of the coordination complexes formation between chloride ions and the different copper species in solution. The films were potentiostatically electrodeposited between -1.4 V and -1.6 V vs Ag/AgCl reference electrode. Then, these films were characterized through different techniques: X-ray diffraction, scanning electron microscopy, optical characterization, and capacitance measurements through electrochemical impedance spectroscopy.
机译:这项研究表明,在氯离子存在下,从二甲基亚砜(DMSO)溶液在氟掺杂的氧化锡(FTO)基板上电沉积Cu2O膜时获得的结果。在进行膜电沉积之前,为了建立Cu2O电沉积的最佳条件,在存在氯离子的情况下对前体进行了详细的电化学研究。与以前从自由氯化物DMSO溶液进行Cu2O电沉积研究期间获得的伏安曲线相比,显示出明显的差异。这些差异是氯离子与溶液中不同铜物种之间形成配位络合物的结果。与Ag / AgCl参比电极相比,将膜恒电位电沉积在-1.4 V和-1.6 V之间。然后,通过不同的技术对这些膜进行表征:X射线衍射,扫描电子显微镜,光学表征和通过电化学阻抗谱进行电容测量。

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