Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition

摘要

p class="global-para-14" pSingle-crystal thin films of gallium oxide (Gasub2/subOsub3/sub), an ultra-wide bandgap semiconductor, were fabricated on c -plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Gasub2/subOsub3/sub thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Gasub2/subOsub3/sub thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system./p /p