首页> 外文期刊>Journal of Ovonic Research >Synthesis and characterization of doped and undoped ZnO nanowireanorods coating on various substrate (AlN, SiO2 and FTO) for photovoltaic hydrogen sensor applications
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Synthesis and characterization of doped and undoped ZnO nanowireanorods coating on various substrate (AlN, SiO2 and FTO) for photovoltaic hydrogen sensor applications

机译:光伏氢传感器应用中各种衬底(AlN,SiO 2 和FTO)上掺杂和未掺杂的ZnO纳米线/纳米线涂层的合成与表征

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Zinc oxide and Ga-doped ZnO nanowires and nanorods are synthesized on various substrate like Fluorine doped tin oxide glass plate, SiO 2 coated Silico n substrate and aluminum nitride coated silicon substrates. The coating process carried out using zinc oxide sol -gel solution. The synthesized material was characterized using XRD (X-ray diffraction), FE-SEM (Field emission scanning electron microscopy), photoluminescence spectroscopy and electrical conductive gas sensor measurements. The fine nanowires formation on FTO plants are clearly seen in FE-SEM results. The ZnO nanorods and Ga-doped ZnO forms nanodisk structures on AlN coated Si substrate. The synthesized doped and undoped ZnO coated various substrate tested for its electrical conductivity measurements under flow of hydrogen gas sensor applications. The electrical property of the as synthesized material was analyzed by I-V characterization.
机译:氧化锌和Ga掺杂的ZnO纳米线和纳米棒是在各种衬底上合成的,例如氟掺杂的氧化锡玻璃板,SiO 2涂层的硅衬底和氮化铝涂层的硅衬底。涂覆过程使用氧化锌溶胶-凝胶溶液进行。使用XRD(X射线衍射),FE-SEM(场发射扫描电子显微镜),光致发光光谱法和导电气体传感器测量对合成材料进行表征。在FE-SEM结果中可以清楚地看到FTO植物上的细纳米线形成。 ZnO纳米棒和Ga掺杂的ZnO在AlN涂层的Si衬底上形成纳米盘结构。合成掺杂和未掺杂的ZnO涂层的各种基材均经过氢气传感器应用流量测试,以测试其电导率。通过IV表征分析了作为合成材料的电性能。

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