Effect of partial replacement of Se by Ge on the physical parameters of Ge-Sn-Se glass system

摘要

Ge-Sn-Se is one of the important arsenic free chalcogenide system. We have attempted toanalyse effect of partial replacement of Se by Ge on the physical parameters such ascoordination number, lone pair electrons, floppy modes, bond energy and glass transitiontemperature of GexSn10Se90-x (x = 8, 10, 12, 14, 16, 18, 20). Heat of atomization andcohesive energy of the system has been also evaluated. Average single bond energydecreases with increasing concentration of Ge while glass transition temperature increases.Number of lone pair electrons decreased with the addition of Ge, leading to the decrease inflexibility of the system.