Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

摘要

Single- and few-layer graphene sheets were fabricated by selective chemical reactions between Co film and SiC substrate. A rapid cooling process was employed. The number of layers and crystallinity of graphene sheets were controlled by process parameters. The formation mechanism of graphene was highly sensitive to carbon diffusion. Free carbon precipitated and then moved across the product layer that was composed mainly of cobalt-silicides. The graphene layer formed homogeneously on the surface and then transferred to the other substrate. This could provide a method for high-quality fabrication of wafer-sized graphene sheets.