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首页> 外文期刊>Journal of nanomaterials >Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll
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Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

机译:石墨烯纳米卷的载流子统计和量子电容模型

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摘要

As a new category of quasi-one-dimensional materials, graphene nanoscroll (GNS) has captivated the researchers recently because of its exceptional electronic properties like having large carrier mobility. In addition, it is admittedthat the scrolled configurations for graphene indicate larger stability concerning the energy, as opposed to their counterpart planar configurations like nanoribbon, nanotube, and bilayer graphene. By utilizing a novel analytical approach, the current paper introduces modeling of the density of state (DOS), carrier concentration, and quantum capacitance for graphene nanoscroll (suggestedschematic perfect scroll-like Archimedes spiral). The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.
机译:作为一种新的准一维材料,石墨烯纳米卷(GNS)由于其卓越的电子特性(例如具有大的载流子迁移率)而吸引了研究人员。另外,公认的是,石墨烯的滚动构型指示出与能量有关的更大的稳定性,这与它们对应的平面构型如纳米带,纳米管和双层石墨烯相反。通过利用一种新颖的分析方法,本论文介绍了石墨烯纳米卷(建议示意化学卷类似阿基米德螺旋)的状态密度(DOS),载流子浓度和量子电容的建模。首先导出DOS模型,然后将其应用于计算载流子浓度和量子电容模型。此外,对简并和非简并状态的载流子浓度和量子电容进行了建模,并研究了结构参数和手性数对状态密度和载流子浓度的影响。最近,还研究了温度对量子电容的影响。

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