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Charge Density Analysis and Transport Properties of TTF Based Molecular Nanowires: A DFT Approach

机译:基于TTF的分子纳米线的电荷密度分析和传输性质:DFT方法

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The present study has been performed to understand the charge density distribution and the electrical characteristics of Au and thiol substituted tetrathiafulvalene (TTF) based molecular nanowire. A quantum chemical calculation has been carried out using DFT method (B3LYP) with the LANL2DZ basis set under various applied electric fields (EFs). The bond topological analysis characterizes the terminal Au–S and S–C bonds as well as all the bonds of central TTF unit of the molecule. The variation of electron density and Laplacian of electron density at the bond critical point of bonds for zero and different applied fields reveal the electron density distribution of the molecule. The molecular conformation, the variation of atomic charges and energy density distribution of the molecule have been analyzed for the various levels of applied EFs. The HOMO-LUMO gap calculated from quantum chemical calculations has been compared with the value calculated from the density of states. The variation of dipole moment due to the polarization effect and theI-Vcharacteristics of the molecule for the various applied EFs have been well discussed.
机译:进行本研究是为了了解基于Au和硫醇取代的四硫富瓦烯(TTF)的分子纳米线的电荷密度分布和电学特性。使用DFT方法(B3LYP)在不同的施加电场(EFs)下以LANL2DZ为基础进行了量子化学计算。键拓扑分析表征了末端的Au–S和S–C键以及分子中心TTF单元的所有键。对于零和不同的施加场,在键的键临界点处的电子密度和电子密度的拉普拉斯算子的变化揭示了分子的电子密度分布。对于所应用EF的各种水平,已经分析了分子构象,原子电荷的变化和分子的能量密度分布。将通过量子化学计算计算出的HOMO-LUMO间隙与根据态密度计算出的值进行了比较。对于极化效应和各种应用EF分子的I-V特性,偶极矩的变化已得到了很好的讨论。

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