Doping with combinations of Tl0.3-xSnxin a certain concentration range enhances the zero resistivity temperature Tc(0)from 104 to 108K. Both high-Tc (2223) and Low-Tc (2212) phases were detected by the X-ray diffraction analysis. However the low-Tc phase is found to dominate over the high-Tc phase with the increase in Sn content. Critical temperatures were determined by the electrical resistivity and ac magnetic susceptibility measurements. Amongst the doped samples studied here a sample containing Sn content of x = 0.06 exhibits comparatively the lowest value of ΔT = 5K, the lowest room temperature resistivity ofρRT= 0.01494 ohm-cm and the highest value of Tc(0)= 108K.
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