Thermal behavior of semiconductor bismuth iodate [Bi(IO3)3] crystals grown by silica gel

摘要

The Bismuth Iodate [Bi(IO3)3] crystals have been grown in Sodium meta silicate gel using the Single diffusion method at room temperature. The grown crystals were characterized by thermo analytical techniques (TGA, DTA, DTG and DSC) to estimate its electrical properties like conductivity. X-ray powder diffraction (XRD), By powder X-ray diffraction analysis the crystal structure is confirmed to be Monoclinic, having lattice parameters a = 6.09 A° , b = 16.68 A° , and c = 5.58 A° . Thermal study reveals that Bismuth Iodate crystal is Octa-hydrous. TGA, DTA, DTG and DSC analysis shows a remarkable thermal stability.