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首页> 外文期刊>Wireless Engineering and Technology >Design of Low Power CMOS LNA with Current-Reused and Notch Filter Topology for DS-UWB Application
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Design of Low Power CMOS LNA with Current-Reused and Notch Filter Topology for DS-UWB Application

机译:具有电流复用和陷波滤波器拓扑的低功耗CMOS LNA设计,用于DS-UWB应用

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摘要

This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order notch filter to produce band rejection in the 5 - 6 GHz frequency band. The input reflection coefficient S11 and output reflection S22 are both less than –10 dB. The maximum power gain S21 is 15 dB while the maximum rejection ratio is over –10 dB at 4.8 GHz. The minimum noise figure is 5 dB. The input referred third-order intercept point (IIP3) is –7 dBm at 6 GHz. The power consumption is 6.4 mW from a 1-V power supply.
机译:本文介绍了具有低级LNA的第二级设计,该级在陷波滤波器中用于DS-UWB应用。 LNA采用电流重用结构来降低功耗,并采用有源二阶陷波滤波器来产生5-6 GHz频带的带阻。输入反射系数S11和输出反射S22均小于–10 dB。在4.8 GHz时,最大功率增益S21为15 dB,而最大抑制比则超过–10 dB。最小噪声系数为5 dB。输入参考的三阶交调点(IIP3)在6 GHz下为–7 dBm。 1V电源的功耗为6.4mW。

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