High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications

摘要

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductorfield-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order torealize higher cell density, higher current driving capability, cost-effective production, and higher reliability, selfalignedtrench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltageand simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trenchgate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistanceand breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio wasapproximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.