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首页> 外文期刊>Transactions on Electrical and Electronic Materials >Nd:YVO4 Laser Patterning of Various Transparent Conductive Oxide Thin Films on Glass Substrate at a Wavelength of 1,064 nm
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Nd:YVO4 Laser Patterning of Various Transparent Conductive Oxide Thin Films on Glass Substrate at a Wavelength of 1,064 nm

机译:Nd:YVO 4 在玻璃基板上波长为1,064 nm的各种透明导电氧化物薄膜的激光图案化

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摘要

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.
机译:在1,064 nm的红外(IR)波长下,将二极管泵浦的Q开关激光器用于在玻璃基板上直接图案化各种透明导电氧化物(TCO)薄膜。在各种激光束条件下,激光烧蚀结果表明氧化铟锡(ITO)膜已被完全去除。相反,在任何激光束条件下均未蚀刻氧化锌(ZnO)膜,仅以低扫描速度烧蚀铟镓锌氧化物(IGZO)。认为激光烧蚀的差异是由于ITO,IGZO和ZnO的晶体结构和热膨胀系数(CTE)所致。激光图案化凹槽的宽度取决于薄膜材料,重复率和激光束的扫描速度。

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