Chemical State Analysis of Si-Doped CNT on SiC by Hard X-Ray Photoelectron Spectroscopy

摘要

The carbon nanotubes (CNTs) on 6H-SiC and Si-doped CNTs on 6H-SiC were analyzed by hard x-ray photoelectron spectroscopy to identify the chemical bonding character of the doped Si in the CNT layer. We performed the depth profiling of the sample by changing photoelectron's take-off-angle (TOA). The spectral component associated with the doped Si is clearly seen in the Si 1s photoelectron spectra of Si-doped CNTs on 6H-SiC. The Si 1s peak shifts toward lower kinetic energy side from TOA = 80° (bulk-sensitive) to 8° (surface-sensitive), which implies the formation of the sp2-like structure in Si-doped CNTs. [DOI: 10.1380/ejssnt.2011.54]