ELECTRONIC TRANSPORT STUDIES OF BULK GaInP AND AlGaInP BASED ON AN ENSEMBLE MONTE CARLO CALCULATION INCLUDING THREE-VALLEY BAND STRUCTURE MODEL

H. ARABSHAHI; M. R. KHALVATI

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ELECTRONIC TRANSPORT STUDIES OF BULK GaInP AND AlGaInP BASED ON AN ENSEMBLE MONTE CARLO CALCULATION INCLUDING THREE-VALLEY BAND STRUCTURE MODEL

机译：基于包囊三谷带结构模型的蒙特卡罗计算的块体GaInP和AlGaInP电子传输研究

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《The African Physical Review》 |2009年第2009期|共页
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H. ARABSHAHI; M. R. KHALVATI;
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7. Erratum: ‘‘Monte Carlo based calculations of hole transport including the hole‐plasmon interaction in degenerate bulk GaAs’’ J. Appl. Phys. 75, 4009 (1994) [O] . Nabil S. Mansour, Yang Wang, Kevin F. Brennan 1995

机译：错误：''孔卡洛的孔传输计算，包括退化散装GaAs中的孔等离子相互作用J.苹果。物理。 75,4009（1994）

ELECTRONIC TRANSPORT STUDIES OF BULK GaInP AND AlGaInP BASED ON AN ENSEMBLE MONTE CARLO CALCULATION INCLUDING THREE-VALLEY BAND STRUCTURE MODEL

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