Exploration and characterization of the memcapacitor and memristor properties of Ni–DNA nanowire devices

摘要

Ni ions can be aligned by a double-stranded DNA and form a Ni–DNA nanowire. By integrating with the semiconductor circuits it becomes a novel molecular device, which is the first real dual memelement that exhibits functionalities of novel resistor and capacitor with memory, and redox-induced negative differential resistance (NDR) properties. The working mechanism of this novel device is similar to the memcomputing in brain.