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Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

机译:基于III-V的材料在硅上的无氧化物键合以及用于先进光学功能的混合波导的纳米结构

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Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.
机译:使用绝缘体上硅(SOI)或Si基板,在平面硅(Si)表面和纳米结构表面上都证明了基于III-V的集成光学材料的无氧化物键合。混合接口具有电气和机械特性。包括硅导层的双周期纳米结构的混合InP-on-SOI波导被证明可提供波长选择性传输。与引导几何结构的纳米结构设计相关的这种无氧化物的界面对于改进的混合装置的电和光学操作都具有巨大的潜力。

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