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Half-metallic ferromagnetism in $m{Ti_{2}IrZ (Z = B, Al, Ga, and In)}$ Heusler alloys: A density functional study

机译:$ rm {Ti_ {2} IrZ(Z = B,Al,Ga和In)} $ Heusler合金中的半金属铁磁性:密度泛函研究

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The first-principle density functional theory (DFT) calculations were employed to investigate the electronic structures, magnetic properties and half-metallicity of $m{Ti_{2}IrZ (Z = B, Al, Ga, and In)}$ Heusler alloys with $m{AlCu_{2}Mn-}$ and $m{CuHg_{2}Ti-}$type structures within local density approximation and generalised gradient approximation for the exchange correlation potential. It was found that $m{CuHg_{2}Ti-}$type structure in ferromagnetic state was energetically more favourable than $m{AlCu_{2}Mn-}$type structure in all compounds except $m{Ti_{2}IrB}$ which was stable in $m{AlCu_{2}Mn-}$type structure in non-magnetic state. $m{Ti_{2}IrZ (Z = B, Al, Ga, and In)}$ alloys in $m{CuHg_{2}Ti-}$type structure were half-metallic ferromagnets at their equilibrium lattice constants. Half-metallic band gaps were respectively equal to 0.87, 0.79, 0.75, and 0.73 eV for $m{Ti_{2}IrB}$, $m{Ti_{2}IrAl}$, $m{Ti_{2}IrGa}$, and $m{Ti_{2}IrIn}$. The origin of half-metallicity was discussed for $m{Ti_{2}IrGa}$ using the energy band structure. The total magnetic moments of $m{Ti_{2}IrZ (Z = B, Al, Ga, and In)}$ compounds in $m{CuHg_{2}Ti}$-type structure were obtained as $2mu_{B}$ per formula unit, which were in agreement with Slatera??Pauling rule $(M_{tot} = Z_{tot}a??18)$. All the four compounds were half-metals in a wide range of lattice constants indicating that they may be suitable and promising materials for future spintronic applications.
机译:第一原理密度泛函理论(DFT)计算用于研究$ rm {Ti_ {2} IrZ(Z = B,Al,Ga和In)} $ Heusler的电子结构,磁性和半金属性具有$ rm {AlCu_ {2} Mn-} $和$ rm {CuHg_ {2} Ti-} $型结构的合金,在局部密度近似和广义梯度近似中具有交换相关势。发现在除$ rm {Ti_ {之外的所有化合物中,铁磁性状态的$ rm {CuHg_ {2} Ti-} $型结构在能量上比$ rm {AlCu_ {2} Mn-} $型结构更有利。 2} IrB} $在非磁性状态下稳定在$ rm {AlCu_ {2} Mn-} $型结构中。 $ rm {CuHg_ {2} Ti-} $型结构中的$ rm {Ti_ {2} IrZ(Z = B,Al,Ga和In)} $合金在其平衡晶格常数下为半金属铁磁体。 $ rm {Ti_ {2} IrB} $,$ rm {Ti_ {2} IrAl} $,$ rm {Ti_ {2}的半金属带隙分别等于0.87、0.79、0.75和0.73 eV } IrGa} $和$ rm {Ti_ {2} IrIn} $。使用能带结构讨论了 rm {Ti_ {2} IrGa} $的半金属性的起源。获得$ rm {CuHg_ {2} Ti} $型结构中的$ rm {Ti_ {2} IrZ(Z = B,Al,Ga和In)} $化合物的总磁矩为$ 2 mu_。每个公式单位{B} $,与Slatera ?? Pauling规则$(M_ {tot} = Z_ {tot} a ?? 18)$一致。四种化合物都是具有广泛晶格常数的半金属,这表明它们可能是未来自旋电子学应用的合适和有前途的材料。

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