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Structural, electrical and optical studies on spray-deposited aluminium-doped ZnO thin film

机译:喷涂铝掺杂ZnO薄膜的结构,电学和光学研究

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Thin films of zinc oxide (ZnO) were deposited on cleaned glass substrates by chemical spray pyrolysis technique using Zn(CH3COO)2 as precursor solution. Also, aluminium-doped thin films of ZnO were prepared by using AlCl3 as doping solution for aluminium. The dopant concentration [Al/Zn atomic percentage (at%)] was varied from 0 to 1.5 at% in thin films of ZnO prepared in different depositions. Structural characterization of the deposited films was performed with X-ray diffraction (XRD) studies. It confirmed that all the films were of zinc oxide having polycrystalline nature and possessing typical hexagonal wurtzite structure with crystallite size varying between 100.7 and 268.6 nm. The films exhibited changes in relative intensities and crystallite size with changes in the doping concentration of Al. The electrical studies established that 1 at% of Aldoping was the optimum for enhancing electrical conduction in ZnO thin films and beyond that the distortion caused in the lattice lowered the conductivity. The films also exhibited distinct changes in their optical properties at different doping concentrations, including a blue shift and slight widening of bandgap with increasing Al dopant concentration.
机译:通过化学喷雾热解技术,以Zn(CH3COO)2为前驱体溶液,将氧化锌(ZnO)薄膜沉积在清洁的玻璃基板上。另外,通过使用AlCl 3作为铝的掺杂溶液来制备铝掺杂的ZnO薄膜。在不同沉积中制备的ZnO薄膜中,掺杂剂浓度[Al / Zn原子百分比(at%)]从0到1.5 at%变化。沉积膜的结构表征通过X射线衍射(XRD)研究进行。证实所有的膜都是具有多晶性质的氧化锌,并具有典型的六方纤锌矿结构,其微晶尺寸在100.7至268.6nm之间变化。膜显示出相对强度和微晶尺寸随Al掺杂浓度的变化而变化。电气研究表明,Al掺杂的1 at%是增强ZnO薄膜导电性的最佳选择,除此之外,晶格中引起的变形会降低导电性。在不同的掺杂浓度下,这些薄膜的光学性能也表现出明显的变化,包括蓝移和随着Al掺杂浓度的增加,带隙略微变宽。

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