Phthalocyanine zinc thin &#64257;lm &#64257;eld-effect transistor with SiO2/Si3N4/SiO2 multilayer insulator

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Phthalocyanine zinc thin ﬁlm ﬁeld-effect transistor with SiO2/Si3N4/SiO2 multilayer insulator

机译：具有SiO2 / Si3N4 / SiO2多层绝缘体的酞菁锌薄＆＃64257; lm效应晶体管

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Top-contactPhthalocyaninezinc(ZnPc)thin-#64257;lm#64257;eld-effecttransistor(TFT)withSiO2/Si3N4/SiO2multilayerasthedielectricisfabricatedandinvestigated.SiO2/Si3N4/SiO2multilayerhasbeenpreparedbymagnetronsputtering.ComparedtoSiO2insulationlayerdeviceofthesamethickness,theelectricalcharacteristicsofmultilayerdevicewereimproved,suchasthe#64257;eldeffectmobilityenhancedfrom3.0times;10-4cm2/Vsto5.8times;10-4cm2/Vs,capacitanceperunitareaofthegateenhancedfrom10.1nF/cm2to15.3nF/cm2andleakagecurrentdecreased.TheSiO2/Si3N4/SiO2deviceshowsanimprovedperformanceandon-currenttooff-currentratioofIon/Ioff=1.0times;103.AtomicforcemicroscopeimagesofthesurfaceofSiO2/Si3N4/SiO2multilayeralsohavebeenstudied.

机译：顶contactPhthalocyaninezinc（的ZnPc）薄壁＃64257流明＃64257; ELD-effecttransistor（TFT）withSiO2 /氮化硅/ SiO2multilayerasthedielectricisfabricatedandinvestigated.SiO2 /氮化硅/ SiO2multilayerhasbeenpreparedbymagnetronsputtering.ComparedtoSiO2insulationlayerdeviceofthesamethickness，theelectricalcharacteristicsofmultilayerdevicewereimproved，suchasthe＃64257; eldeffectmobilityenhancedfrom3.0times; 10-4cm2 / Vsto5 .8倍; 10-4cm2 / Vs，门的单位面积电容从10.1nF / cm2增强到15.3nF / cm2，漏电流减小.SiO2 / Si3N4 / SiO2器件显示出改善的性能和电流/电流/离子/Ioff=1.0倍的表面积使SiO2 / Si2的软表面厚度增加了2。

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《Optoelectronics and Advanced Materials-Rapid Communications》 |2014年第2014期|共页
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2. Construction of Membrane Sieves Using Stoichiometric and Stress-Reduced Si3N4/SiO2/Si3N4 Multilayer Films and Their Applications in Blood Plasma Separation [J] . Dae-Sik Lee, Yo Han Choi, Yong Duk Han, ETRI journal . 2012,第2期

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3. Thin SiO2/a-Si:H/SiO2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories [J] . Mateos D., Diniz J. A., Nedev N., Thin Solid Films . 2017,第APRa30期

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4. Forming of SiO2 film by spin-on glass and CO2 laser annealing for gate insulator of polycrystalline silicon thin film transistors [C] . Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, IEEE International Meeting for Future of Electron Devices, Kansai . 2013

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5. Behavioral modeling of zinc-oxide, thin-film, field-effect transistors and the design of pixel driver, analog amplifier, and low-noise RF amplifier circuits. [D] . Calder, Leroy Alfred, III. 2010

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7. Optimization of a solution-processed SiO2 gate insulator by plasma treatment for zinc oxide thin film transistors. [O] . Jeong Y., Pearson C., Kim H-G., 2016

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8. Thin Films Properties of Sputtered Niobium Silicide on SiO2, Si3N4 and on N+ Poly-Si [R] . Chow, T. P., Lu, W. J., Steckl, A. J., 1985

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Phthalocyanine zinc thin &#64257;lm &#64257;eld-effect transistor with SiO2/Si3N4/SiO2 multilayer insulator

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Phthalocyanine zinc thin ﬁlm ﬁeld-effect transistor with SiO2/Si3N4/SiO2 multilayer insulator