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The interaction between light impurities and vacancies in titanium and aluminum metals: A DFT study

机译:钛和铝金属中轻杂质与空位之间的相互作用:DFT研究

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In this paper, we present binding energies between hydrogen (H), carbon (C), nitrogen (N) and oxygen (O) atoms and a vacancy in the hexagonal closed-packed (HCP) lattice of titanium (Ti) and the face centered cubic (FCC) lattice of aluminum (Al), calculated using the density functional theory (DFT). We have also investigated the trapping of up to five hydrogen atoms by a vacancy and the reduction of the vacancy formation energy, due to the formation of a hydrogen–vacancy complex. We used the molecular-dynamics modeling with consecutive relaxation at 0K to obtain an atomic configuration of the vacancy–impurity complex, corresponding to the global energy minimum. According to our calculations, C–V, H–V, C– (H–V), N–(H–V) complexes are stable in the Al lattice with only H–V complex being stable in Ti. The formation of C–(H–V) and N–(H–V) complexes in the Al lattice results in the negative vacancy formation energy. The formation of H–V complex decreases the vacancy formation energy by 0.26eV in the Ti lattice. A vacancy in the Ti lattice can trap up to four hydrogen atoms.
机译:在本文中,我们介绍了氢(H),碳(C),氮(N)和氧(O)原子之间的结合能以及钛(Ti)和表面的六方密堆积(HCP)晶格中的空位使用密度泛函理论(DFT)计算的铝(Al)的中心立方(FCC)晶格。我们还研究了由于形成空位配合物而导致空位捕获最多五个氢原子以及空位形成能的降低。我们使用在0K处连续弛豫的分子动力学模型来获得空缺-杂质复合物的原子构型,对应于整体能量最小值。根据我们的计算,在Al晶格中C–V,H–V,C–(H–V),N–(H–V)络合物是稳定的,而Ti中只有H–V络合物是稳定的。 Al晶格中C–(H–V)和N–(H–V)配合物的形成导致负空位形成能。 HV复合物的形成使Ti晶格中的空位形成能降低了0.26eV。 Ti晶格中的空位最多可以捕获四个氢原子。

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