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Fabrication of high-aspect-ratio arrayed structures using Si electrochemical etching

机译:硅电化学刻蚀制备高纵横比阵列结构

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This paper reviews microscale processes to fabricate three-dimensional structures, in particular, high-aspect-ratio arrayed structures, using precise electrochemical etching process. Array of sharp micropits were pre-formed on the front side surface of Si wafer and the electrochemical etching was carried out using aqueous HF solution, with the back side illumination to generate holes, which diffused to the edge of the micropits to proceed the dissolution of Si with fluoride species. In order to form high-aspect-ratio pores at selected areas, a shade mask pattern was fabricated on the back side surface to align the illumination to the pre-patterned area on the front side surface. The parameters, such as HF concentration, current density and hole diffusion length, were optimized and uniform array of straight pores was formed into the designed area of Si wafer. Subsequently the surface of the pores was thermally oxidized to form SiO2 layers, and arrayed glass tubes with picoliter volume were fabricated. On the other hand, the pore filling with metal was attempted using electrodeposition to obtain array of the metal needles. For this, the "single batch" process was developed to form the pore array and metal filling with single electrolyte, and array of metal micro needles was successfully formed. These processes demonstrated capability and possibility of the electrochemical processes for microscale fabrication, and further precise processes can be developed using these approaches.
机译:本文回顾了使用精密电化学刻蚀工艺制造微观结构的三维工艺,尤其是高纵横比阵列结构。在硅片的前表面上预形成了一系列尖锐的微坑,并使用HF水溶液进行电化学蚀刻,并在背面照射以产生空穴,这些空穴扩散到微坑的边缘,以进行溶蚀。硅具有氟化物种类。为了在选定区域形成高纵横比的孔,在背面上制作了遮光罩图案,以使照明与正面上的预先图案化的区域对准。优化了诸如HF浓度,电流密度和空穴扩散长度的参数,并在硅晶片的设计区域中形成了均匀的直孔阵列。随后将孔的表面热氧化以形成SiO 2 层,并制造出具有皮微升体积的阵列玻璃管。另一方面,尝试通过电沉积用金属填充孔以获得金属针的阵列。为此,开发了“单批”工艺以形成孔阵列和用单一电解质填充金属,并成功形成了金属微针阵列。这些过程证明了用于微型制造的电化学过程的能力和可能性,并且可以使用这些方法来开发更精确的过程。

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