The c(4×4)–a(1×3) surface reconstruction transition on InSb(001): Static versus dynamic conditions

摘要

The transition between the a(1 × 3) and c(4 × 4) surface reconstructions of InSb(0 0 1) has been carefully monitored by reflection high energy electron diffraction as a function of temperature and Sb 2 flux, without incident In flux. Arrhenius-like behaviour is observed across the whole range of Sb 2 fluxes and temperatures, allowing accurate internal calibration of substrate temperature. This behaviour is in contrast to aggregated data obtained under dynamic molecular beam epitaxy conditions, which show two regimes rather than a single Arrhenius-like phase boundary. The results are explained qualitatively by the atomistic kinetics in static versus dynamic conditions.