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首页> 外文期刊>Results in Physics >A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
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A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs

机译:总电离剂量对PD I / O SOI PMOSFET热载流子效应的影响研究

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The hot carrier injection (HCI) effect induced degradation is investigated for gamma ray irradiated PD I/O SOI PMOSFETs with T-shaped gate and H-shaped gate. Radiation enhanced effect on degradation during hot carrier stress is observed in two kinds of samples. And it is observed that radiation has more significant effect on T-gate devices than H-gate during stress time. Besides, the change on gate current degradation induced by irradiation is also worth noticing.
机译:对于带有T形栅极和H形栅极的伽马射线辐照的PD I / O SOI PMOSFET,研究了热载流子注入(HCI)效应引起的退化。在两种样品中都观察到了辐射增强对热载流子应力降解的影响。并且观察到,在应力时间内,辐射对T型栅极器件的影响比H型栅极更大。此外,辐照引起的栅极电流退化的变化也值得注意。

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