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Defects in Square 2D Arrays of Strained Quantum Dots

机译:应变量子点的二维二维阵列中的缺陷

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A theoretical model is suggested which describes quantum dot ensembles of the new type, namely the quantum dot arrays with defects. These defects represent local violations of the geometry of 2D arrays formed by quantum dots on crystalline substrates. The elastic moduli of strained arrays of quantum dots are estimated, in which case strains describe deviations of spatial positions of quantum dots from nodes of ideal square arrays. The formulas for characteristic energies of dislocations, disclinations and point defects in 2D arrays of quantum dots are derived. It is shown that point defects are characterized by comparatively low values of the formation energy and, therefore, are capable of being intensively formed in quantum dot arrays fabricated at highly non-equilibrium conditions.
机译:建议建立一个理论模型,描述新型量子点集成体,即具有缺陷的量子点阵列。这些缺陷表示对晶体衬底上量子点形成的2D阵列几何形状的局部破坏。估计量子点的应变阵列的弹性模量,在这种情况下,应变描述了量子点的空间位置与理想正方形阵列的节点之间的偏差。推导了二维量子点阵列中位错,错位和点缺陷的特征能公式。结果表明,点缺陷的特征在于相对较低的形成能值,因此可以在高度非平衡条件下制造的量子点阵列中集中形成。

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