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Near-threshold Computing of Single-rail MOS Current Mode Logic Circuits

机译:单轨MOS电流模式逻辑电路的近阈值计算

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Scaling supply voltage is an efficient technique to achieve low power-delay product. This study presents low-power Single-Rail MOS Current Mode Logic (SRMCML) circuits which operate on near-threshold region. The near-threshold operations for the basic SRMCML circuits such as inverter/buffer, OR2/NOR2 and 2/NAND2, OR3/NOR3 and XOR3/NXOR3 are investigated. All circuits are simulated with HSPICE at the SMIC 130 nm CMOS process by varying supply voltage from 0.6V to 1.3V with 0.1V steps. Based on the simulation results, lowering supply voltage is advantageous. The power dissipations of the proposed near-threshold SRMCML basic gates are almost the same as the conventional Dual-Rail MCML (DRMCML) circuits and the delay of the SRMCML is less than the DRMCML because of its single-rail scheme.
机译:缩放电源电压是一种实现低功耗产品的有效技术。这项研究提出了在阈值附近工作的低功率单轨MOS电流模式逻辑(SRMCML)电路。研究了基本SRMCML电路(例如反相器/缓冲器,OR2 / NOR2和2 / NAND2,OR3 / NOR3和XOR3 / NXOR3)的接近阈值操作。所有电路均采用HSPICE在SMIC 130 nm CMOS工艺上进行仿真,方法是将电源电压从0.6V改变为1.3V,步长为0.1V。根据仿真结果,降低电源电压是有利的。拟议的近阈值SRMCML基本门的功耗与常规双轨MCML(DRMCML)电路几乎相同,并且由于其单轨方案,SRMCML的延迟小于DRMCML。

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