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A Review on Zinc Sulphide Thin Film Fabrication for Various Applications Based on Doping Elements

机译:基于掺杂元素的各种用途的硫化锌薄膜制备研究进展

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Zinc Sulfide (ZnS) thin film has attracted increasing attention due to their potential applications in the new generation of nano-electronics and opto-electronics devices. The physical and chemical properties of ZnS have outstanding quality for different applications. Moreover, ZnS doped with various elements are creating a new era for both academic research and industrial applications. So, the optical properties of modified ZnS thin film will help us to find a suitable doping element for convenient deposition which may enhance the conductance and transmitting properties of the film. This review work has been carried out to explore the four-modification elements that constitute Cu, Ni, Co & Fe as descending order of atomic number corresponding to Zn, along with some potential applications considering the recent research work with other doping elements too such as Al, C, Pt etc. For example, FE, FET, Catalytic, Solar cell, Electroluminescence, Fuel cell, different sensors (Chemical sensors, Bio-sensors, Humidity sensors, light sensors, UV light sensors) and nanogenerators use ZnS thin film.
机译:硫化锌(ZnS)薄膜由于其在新一代纳米电子和光电设备中的潜在应用而受到越来越多的关注。 ZnS的物理和化学性质对于不同的应用具有卓越的质量。而且,掺杂有各种元素的ZnS正在为学术研究和工业应用创造一个新时代。因此,改性ZnS薄膜的光学性能将有助于我们找到合适的掺杂元素以方便沉积,从而可以提高薄膜的电导率和透射率。进行这项审查工作是为了探索构成Cu,Ni,Co和Fe的四种变质元素,它们是对应于Zn的原子序数的降序,并考虑到了最近与其他掺杂元素一起进行的研究工作,例如潜在的应用。 Al,C,Pt等。例如,FE,FET,催化,太阳能电池,电致发光,燃料电池,不同的传感器(化学传感器,生物传感器,湿度传感器,光传感器,UV光传感器)和纳米发电机使用ZnS薄膜。

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