Polytopic element dope zinc oxide thin film, the production manner and application

摘要

This invention, the polytopic element dope zinc oxide thin film, offers the application to the production manner and the semiconductor photoelectricity device in regard to semi-conducting material production technical field, that production manner, (1) Ga₂ O₃, Al₂ O₃, SiO₂ and the ZnO powder body, Ga₂ O_30.5% - 10%, Al₂ O_30.5 - 5%, SiO_20.5% - 1.5%, the mass, the remainder ZnO powder body % with process and (2) it mixes sintering the above-mentioned powder body blend, process and (3) it makes the target material the target material inserts into the magnetron sputtering chamber, designates as the vacuumIt configurates operating pressure to 0.2Pa - 5Pa, it introduces the mixed gas of the inert gas and the gaseous hydrogen where capacity is 15sccm - 25sccm, with sputtering power 40W - 200W sputtering does in the substrate and the process which obtains the polytopic element dope zinc oxide thin film and, it includes. Choice figure Drawing 3