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Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

机译:通过物理气相沉积法在云母上生长的结晶锑膜的形貌和光响应

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摘要

Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD) of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.
机译:锑是用于制造光电探测器的有前途的材料。这项研究是通过锑在炉管中的云母表面上的物理气相沉积(PVD)处理光敏薄膜的生长。通过扫描电子显微镜(SEM),X射线衍射(XRD),能量色散X射线光谱(EDX)和元素衍射分析研究了生长结构的几何形状。云母上生长的锑膜的XRD峰与JCPDF卡基本匹配。通过SEM显微照片和化学组成分析进一步证实了膜中菱形体晶体结构的形成。霍尔测量结果表明,该薄膜具有良好的导电性,其载流子浓度约为1022Ω·cm-3,迁移率为9.034 cm2 / Vs。已成功地测试了生长的膜的放射线检测能力。使用其电流-电压特性评估膜的光响应。这些研究表明,锑膜的光敏性比结晶锗的光敏性高20倍。

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