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On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

机译:热化学气相沉积生长碳纳米管的生长和微观结构

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Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130?μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.
机译:碳纳米管(CNT)使用热化学气相沉积技术沉积在各种基板上,即未处理的硅和石英,铁沉积的硅和石英,HF处理的硅,氮化硅沉积的硅,铜箔和不锈钢网。描述了在这些基底上生长和合成的CNT的微观结构的最佳参数。结果表明,CNT的生长受到所用基材的强烈影响。在石英,铁沉积的硅和石英,未处理的硅以及氮化硅沉积的硅基板上发现了垂直排列的多壁CNT。另一方面,在不锈钢网上观察到意大利面条型的生长,并且在经HF处理的硅和铜上未观察到CNT的生长。氮化硅沉积的硅基板被证明是长垂直排列长度为110-130?m的CNT的有前途的基板。基于这些结果,我们提出了垂直排列和意大利面条型生长的碳纳米管的可能生长机制。

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