Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment

摘要

The resistive switching characteristics of the Cu/SiO~( x )/Pt structure (control sample) exhibited a direct correlation to humidity. The H~(2)O vapor formed the Cu oxide at the Cu/SiO~( x ) interface, and Cu ions were injected from the Cu oxide into the SiO~( x ) layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environment. The Cu~( x )O layer in the Cu/Cu~( x )O/SiO~( x )/Pt structure (Cu~( x )O sample) helped the dissolution of Cu ions from the Cu electrode into the SiO~( x ) layer, enabling effective electrochemical resistive switching in a vaporless environment. The Cu~( x )O sample exhibited low switching dispersion and favorable endurance characteristics in a vaporless environment.