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Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis

机译:ZnO纳米线的生长机理研究:实验观察和短路扩散分析

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Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.
机译:已经进行了许多研究以探究ZnO纳米线的各种特性,但是只有很少的研究集中在单个纳米线的物理特性上,因为很难分析沿着单个纳米线的生长机理。在这项研究中,使用Ti辅助化学气相沉积(CVD)方法合成了一条ZnO纳米线,以避免出现催化污染。使用带有扩散模型的二维能量色散光谱(EDS)映射获得扩散长度和活化能比。该比值接近0.3,表明ZnO纳米线的生长归因于短路扩散。

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