首页> 美国卫生研究院文献>Nanomaterials >Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis
【2h】

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis

机译:ZnO纳米线的生长机理研究:实验观察和短路扩散分析

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.
机译:已经进行了许多研究以探究ZnO纳米线的各种特性,但是只有少数几个研究重点放在单个纳米线的物理特性上,因为很难分析沿着单个纳米线的生长机理。在这项研究中,使用Ti辅助化学气相沉积(CVD)方法合成了一条ZnO纳米线,以避免出现催化污染。使用二维能量色散光谱(EDS)映射和扩散模型来获得扩散长度和活化能比。该比值接近0.3,表明ZnO纳米线的生长归因于短路扩散。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号