We report on the fabrication of highly uniform field emitter arrays (FEAs) with an integrated self-aligned extraction gate from bulk molybdenum. All critical dimensions of the emitter tip were determined by a single process step of Inductively Coupled Plasma (ICP) etching. In addition, the height difference between the emitter tip and the gate plane was controlled by the thickness of the SiO 2 dielectric layer. A 10 ???μm gate aperture molybdenum-FEAs (Mo-FEAs) at a typical 20 ???μm pitch with 6 ???μm height was achieved with 8.4 mA/cm 2 current density at gate voltages of 110 V and the turn-on field of 1.4 V/???μm. These self-aligned Mo-FEAs could be expanded to active larger areas to increase the emission current.
展开▼
机译：我们报告了从整体钼中集成了自对准提取门的高度均匀场致发射器阵列（FEA）的制造。发射器尖端的所有关键尺寸均通过电感耦合等离子体（ICP）蚀刻的单个处理步骤确定。另外，通过SiO 2介电层的厚度来控制发射极尖端与栅极平面之间的高度差。在110 V的栅极电压下，电流密度为8.4 mA / cm 2时，以典型的20 µm间距和6 µm的高度获得了10 µm的栅极开孔钼-FeAs（Mo-FEA）。导通电场为1.4 V /μm。这些自对准Mo-FEA可以扩展到更大的有源区域，以增加发射电流。
展开▼
