Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser

摘要

A variety of emerging technologies, such as visible light communication systems, require narrow linewidths and easy-to-integrate light sources. Such a requirement could be potentially fulfilled with the distributed Bragg reflector (DBR) lasers, which are also promising for the monolithical integration with other optical components. The InGaN/GaN-based surface etched DBR is designed and optimized using the finite-difference-time-domain (FDTD) method to obtain very narrow-band reflectors that can serve as a wavelength filter. The results reveal that the ultimate reflectivity depends on the grating period and duty ratio of the DBR. Based on the design, the DBR lasers with various duty ratios are fabricated, specifically, the 19th, 13th and 3rd order DBR grating with duty ratio set as 50%/75%/95%. The minimum linewidth could be achieved at 0.45 nm from the 19th order grating with a 75% duty ratio. For comparison, the Fabry–Pérot (F–P) based on the same indium gallium nitride/gallium nitride (InGaN/GaN) epitaxial wafer are fabricated. The full width at half maximum (FWHM) of the DBR laser shrank by 65% compared to that of the conventional F–P laser, which might be helpful in the application of the visible light communication system.