首页> 外文期刊>Frontiers in Chemistry >Systematic Theoretical Study on Structural, Stability, Electronic, and Spectral Properties of Si2MgnQ (Q = 0, ±1; n = 1–11) Clusters of Silicon-Magnesium Sensor Material
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Systematic Theoretical Study on Structural, Stability, Electronic, and Spectral Properties of Si2MgnQ (Q = 0, ±1; n = 1–11) Clusters of Silicon-Magnesium Sensor Material

机译:硅镁传感器材料Si2MgnQ(Q = 0,±1; n = 1-11)团簇的结构,稳定性,电子和光谱性质的系统理论研究

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By using CALYPSO searching method and Density Functional Theory (DFT) method at the B3LYP / 6-311G (d) level of cluster method, a systematic study of the structures, stabilities, electronic and spectral properties of Si2MgQ n (n = 1-11; Q=0, ±1) clusters of silicon-magnesium sensor material, is performed. According to the calculations, it was found that when n 4, most stable isomers in Si2MgQ n (n = 1-11; Q=0, ±1) clusters of silicon-magnesium sensor material are three-dimensional structures. Interestingly, although large size Si2MgQ n clusters show cage-like structures, silicon atoms are not in the center of the cage, but tend to the edge. The Si2Mg-1 1,5,6,8 and Si2Mg+1 3,4,7,9,10 clusters obviously differ to their corresponding neutral structures, which are in good agreement with the calculated values of VIP, AIP, VEA, and AEA. The relative stabilities of neutral and charged Si2MgQ n (n = 1-11; Q=0, ±1) clusters of silicon-magnesium sensor material is analyzed by calculating the average binding energy, fragmentation energy, second-order energy difference and HOMO-LUMO gaps. The results reveal that the Si2Mg0 3, Si2Mg-1 3, Si2Mg+1 3 clusters have stronger stabilities than others. NCP and NEC analysis results show that the charges in Si2MgQ n (n = 1-11; Q=0, ±1) clusters of silicon-magnesium sensor material transfer from Mg atoms to Si atoms except for Si2Mg+1 1, and strong sp hybridizations are presented in Si atoms of Si2MgQ n clusters. Finally, the infrared (IR) and Raman spectra of all ground state of Si2MgQ n (n = 1-11; Q=0, ±1) clusters of silicon magnesium sensor material are also discussed.
机译:通过在团簇方法的B3LYP / 6-311G(d)水平上使用CALYPSO搜索方法和密度泛函理论(DFT)方法,系统研究了Si2MgQ n(n = 1-11)的结构,稳定性,电子和光谱性质;执行Q = 0,±1)的硅镁传感器材料簇。根据计算,发现当n> 4时,硅镁传感器材料的Si2MgQ n(n = 1-11; Q = 0,±1)簇中最稳定的异构体是三维结构。有趣的是,尽管大尺寸的Si2MgQ n团簇显示出笼状结构,但硅原子不在笼的中心,而是趋于边缘。 Si2Mg-1 1,5,6,8和Si2Mg + 1 3,4,7,9,10团簇明显不同于其相应的中性结构,这与VIP,AIP,VEA和AEA。通过计算平均结合能,碎裂能,二阶能差和HOMO-,分析了硅镁传感器材料中性和带电的Si2MgQ n(n = 1-11; Q = 0,±1)团簇的相对稳定性。 LUMO的差距。结果表明,Si2Mg0 3,Si2Mg-1 3,Si2Mg + 1 3团簇具有比其他团簇更高的稳定性。 NCP和NEC分析结果表明,硅镁传感器材料的Si2MgQ n(n = 1-11; Q = 0,±1)簇中的电荷从Mg原子转移到Si原子,除了Si2Mg + 1 1和强sp杂化在Si2MgQ n簇的Si原子中呈现。最后,还讨论了硅镁传感器材料的Si2MgQ n(n = 1-11; Q = 0,±1)团簇的所有基态的红外(IR)和拉曼光谱。

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