In recent years, growing attention has been paid to the threat posed by high-power microwave electromagnetic interference, which can couple into semiconductor electronic devices intentionally from microwave sources or unintentionally due to the proximity to general environmental HF signals. The microwave interference is often considered to have a pulse width ranging from several to several hundreds of nanoseconds. This paper examines physical mechanism of malfunction and destruction of electronic devices by high power microwaves electromagnetic pulse.
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