2.4 GHz WLAN InGaP/GaAs Power Amplifier with Temperature Compensation Technique

摘要

This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from -30oC to +85oC for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from -30oC to +85oC.