Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V-Grooves with (322) Facet Sidewalls by CHEMICAL Beam Epitaxy

摘要

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier l