Solution-processed In₂S₃ buffer layer for chalcopyrite thin film solar cells

摘要

We report a route to deposit In _(2) S _(3) thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In _(2) S _(3) -buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.