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A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

机译:具有0.18μmSiGe BiCMOS技术的自校准功能的5GS / s 8位ADC

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A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm 2 , consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.
机译:已经展示了采用0.18μmSiGe BiCMOS技术实现的5 GS / s 8位模数转换器(ADC)。拟议的ADC基于两通道时间交错架构,每个子ADC均采用基数为4的两级级联折叠和内插拓扑。具有增强的线性度的开环采样保持放大器旨在满足动态性能要求。引入了片上自校准技术以补偿两个子ADC之间的交错失配。测量结果表明,无杂散动态范围(SFDR)保持在44.8 dB以上,峰值为53.52 dB,有效位数(ENOB)大于5.8位,最大2.57 / s时为6.97位。 ADC的差分非线性(DNL)为-0.31 / + 0.23 LSB(最低有效位),积分非线性(INL)为-0.68 / + 0.68 LSB。该芯片占地3.9×3.6 mm 2,消耗的总功率为2.8 W,实现的品质因数(FoM)为10 pJ /转换步长。

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