首页> 外文OA文献 >A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology
【2h】

A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

机译:具有0.18μmSiGeBICMOS技术的5GS / S 8位ADC,具有自校准

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm2, consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.
机译:已经证明了在0.18μmSiGeBICMOS技术中实现的5 GS / S 8位模数转换器(ADC)。所提出的ADC基于双通道时间交错架构,每个子ADC采用两阶段级联折叠和基数-4的内插拓扑。具有增强线性度的开环跟踪和保持放大器旨在满足动态性能要求。介绍片上自校准技术以补偿两个子ADC之间的交织不匹配。测量结果表明,虚假的自由动态范围(SFDR)保持在44.8dB以上,峰值为53.52 dB,数位数(ENOB)大于5.8位,最多可达6.97位高达2.5 GS / s。 ADC表现出-0.31 / + 0.23LSB(最低有效位)的差分非线性(DNL)和-0.68 / + 0.68LSB的整体非线性(INL)。该芯片占地面积3.9×3.6mm2,消耗总功率为2.8 W,实现了10 PJ /转换步骤的优点(FOM)的数字。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号