首页> 外文期刊>International Journal of Electrical and Computer Engineering >IDDQ Testing of Low Voltage CMOS Operational Transconductance Amplifier
【24h】

IDDQ Testing of Low Voltage CMOS Operational Transconductance Amplifier

机译:低压CMOS运算跨导放大器的IDDQ测试

获取原文
       

摘要

The paper describes the design for testability (DFT) of low voltage two stage operational transconductance amplifiers based on quiescent power supply current (I DDQ ) testing. I DDQ testing refers to the integral circuit testing method based upon measurement of steady state power supply current for testing both digital as well as analog VLSI circuit. A built in current sensor, which introduces insignificant performance degradation of the circuit-under-test, has been proposed to monitor the power supply quiescent current changes in the circuit under test. Moreover, the BICS requires neither an external voltage reference nor a current source and able to detect, identify and localize the circuit faults. Hence the BICS requires less area and is more efficient than the conventional current sensors. The testability has also been enhanced in the testing procedure using a simple fault-injection technique. Both bridging and open faults have been analyzed in proposed work by using n-well 0.18μm CMOS technology.
机译:本文介绍了基于静态电源电流(I DDQ)测试的低压两级运算跨导放大器的可测试性(DFT)设计。 I DDQ测试是指基于稳态电源电流测量的集成电路测试方法,用于测试数字和模拟VLSI电路。已经提出了一种内置的电流传感器,该电流传感器对被测电路的性能影响不大,因此可以监视被测电路的电源静态电流变化。此外,BICS既不需要外部参考电压也不需要电流源,并且能够检测,识别和定位电路故障。因此,与传统的电流传感器相比,BICS需要的面积更小且效率更高。使用简单的故障注入技术,在测试过程中也提高了可测试性。在提议的工作中,已经通过使用n阱0.18μmCMOS技术分析了桥接故障和开路故障。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号