Interface Study of ITO/ZnO and ITO/SnO2Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

摘要

Transparent ITO/ZnO and ITO/SnO2complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS) and X-ray Photoelectron Spectroscopy (XPS), and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV), which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase ofEff, FF,Voc, andIscby the introduction of ITO/ZnO and ITO/SnO2layers in CdTe solar cells.