...
首页> 外文期刊>International Journal of VLSI Design & Communication Systems >Survey on Power Optimization Techniques for Low PowerVLSI Circuitsin Deep Submicron Technology
【24h】

Survey on Power Optimization Techniques for Low PowerVLSI Circuitsin Deep Submicron Technology

机译:深亚微米技术中低功率VLSI电路的功率优化技术概述

获取原文
           

摘要

CMOS technology is the key element in the development of VLSI systems since it consumes less power.Power optimization has become an overridden concern in deep submicron CMOS technologies. Due toshrink in the size of device, reduction in power consumption and over all power management on the chipare the key challenges. For many designs power optimization is important in order to reduce package costand to extend battery life. In power optimization leakage also plays a very important role because it hassignificant fraction in the total power dissipation of VLSI circuits. This paper aims to elaborate thedevelopments and advancements in the area of power optimization of CMOS circuits in deep submicronregion. This survey will be useful for the designer for selecting a suitable technique depending upon therequirement.
机译:CMOS技术是VLSI系统开发中的关键要素,因为它消耗的功率更少。功耗优化已成为深亚微米CMOS技术中的首要问题。由于设备尺寸的缩小,功耗的降低以及整个芯片上的电源管理是主要的挑战。对于许多设计而言,电源优化对于降低封装成本和延长电池寿命很重要。在功耗优化中,泄漏也起着非常重要的作用,因为它在VLSI电路的总功耗中占很大比例。本文旨在阐述深亚微米区域CMOS电路功率优化领域的发展和进步。该调查对于设计师根据需求选择合适的技术将是有用的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号