Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

Ramnish Kumar; Sandeep K Arya; Anil Ahlawat

首页> 外文期刊>International Journal of VLSI Design & Communication Systems >Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

【24h】

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

机译：具有极化效应的二维Modfet小信号参数在微波应用中的分析

获取原文

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation. The model includes the spontaneous and piezoelectric polar

机译：已开发出一种改进的AlGaN / GaN调制掺杂场效应晶体管（MODFET）的二维分析模型（2-D）。该模型基于二维Poisson方程的解。该模型包括自发和压电极性

著录项

来源
《International Journal of VLSI Design & Communication Systems》 |2013年第2期|共页
作者
Ramnish Kumar; Sandeep K Arya; Anil Ahlawat;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种
中图分类计算技术、计算机技术;
关键词

相似文献

外文文献
中文文献
专利

1. Parasitic resistance and polarization-dependent polynomial-based non-linear analytical charge-control model for AlGaN/GaN MODFET for microwave frequency applications [J] . Manju Korwal, S. Haldar, Mridula Gupta, Microwave and optical technology letters . 2003,第5期

机译：用于微波频率应用的AlGaN / GaN MODFET的基于寄生电阻和极化相关多项式的非线性分析电荷控制模型
2. Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors [J] . Zlatica Marinkovic, Nenad Ivkovic, Olivera Pronic-Rancic, Microelectronics & Reliability . 2013,第3期

机译：神经网络方法提取微波晶体管小信号模型参数的分析与验证
3. Complex polarization angle: Relation to traditional polarization parameters and application to microwave plasma polarimetry [J] . Czyz ZH, Bieg B, Kravtsov YA Physics Letters, A . 2007,第1a2期

机译：复极化角：与传统极化参数的关系及其在微波等离子体极化中的应用
4. Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications [C] . Ajay Kumar, Neha Gupta, M.M. Tripathi, International Conference on Modern Circuits and Systems Technologies . 2019

机译：从射频/微波应用的角度看TGRC MOSFET的非准静态小信号建模
5. An analysis of the effects of ground parameters and multitemporal compositing techniques in the passive microwave vegetation index. [D] . Henderson, Thomas Handasyd Perkins. 1996

机译：分析地面参数和多时相合成技术对被动微波植被指数的影响。
6. Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves [O] . Isabelle Bisotto, Ethirajulu S Kannan, Jean-Claude Portal, 2014

机译：在不对称解毒剂存在下针对微波不同极化的Si / SiGe异质结构中的棘轮效应研究
7. Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications [O] . Ramnish Kumar, Sandeep K Arya, Anil Ahlawat 2013

机译：微波应用中具有偏振效应的二维modfet小信号参数分析

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

摘要

著录项

相似文献

相关主题

期刊订阅