The Effect of Zr Concentration on Structural, Optical and Electrical Properties of Pb(Zrx,Ti1-x)O3 PZT Prepared by Pulsed Laser Deposition Technique

摘要

Pb(Zrx,Ti1-x)O3 PZT thin films with various ratio of Zr / Ti (x=0.1, 0.3, 0.5, 0.7, 0.9) deposited on glass by pulsed laser deposition technique to investigate the structural, optical and electrical properties in these films. The films were deposited at room temperature. X-ray diffraction (XRD) analysis for PZT illustrated a perovskite phase with a polycrystalline structure at RT for all samples. Optical studies showed that the optical energy gap increases with increasing Zr concentration. The d.c. conductivity (σd.c) decreased with increasing of Zr content. It was observed that the films have two activation energies that decrease with the increase of Zr content. Hall measurements showed that all the films were p-type and the carriers concentration were increase with the increasing of Zr, the mobility inversely proportional with the carriers concentration.