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Structural and electronic properties of boron- bismuth compound under pressure

机译:压力下硼铋化合物的结构和电子性能

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In the present work, we report ?rst principles calculations of the pressure effect on the structural and electronic properties of Boron- Bismuth (BBi) compound in its zincblende phase. The pseudopotential plane wave (PPW) method in the framework of the density func-tional theory (DFT) within the local density approximation for the exchange-correlation functional, and the Hartwigzen-Goedecker-Hutter (HGH) scheme for the pseudopotential were used in the calculation. The unit cell volume, the molecular and crystal densities, the equation of state and also the linear and quadratic pressure coefficients of the energy band-gaps are investigated.
机译:在目前的工作中,我们报告了对溴化铋(BBi)化合物在其闪锌矿相中的结构和电子性能的压力影响的第一原理计算。在交换函数的局部密度近似内,在密度泛函理论(DFT)框架内的伪势平面波(PPW)方法和伪势的Hartwigzen-Goedecker-Hutter(HGH)方案用于伪势平面波(PPW)方法。计算。研究了能带隙的晶胞体积,分子和晶体密度,状态方程以及线性和二次压力系数。

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