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首页> 外文期刊>International Journal of Optoelectronic Engineering >Ultrafast and High Sensitive UV/IR Photodetector Based on a Single SnO2 Nanowire
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Ultrafast and High Sensitive UV/IR Photodetector Based on a Single SnO2 Nanowire

机译:基于单SnO 2 纳米线的超快高灵敏度UV / IR光电探测器

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摘要

Tin oxide, SnO_(2) has potential applications in many research areas. Using a chemical vapor deposition CVD method, high-quality single crystalline SnO_(2) nanowire (NW) was synthesized on a large scale. Individual SnO_(2) nanowire based ultraviolet photodetector was fabricated by simply transferring individual nanowire to Pt interdigital electrodes. The photodetector exhibited excellent photoconductive performance in terms of high sensitivity to the ultraviolet 375 nm and infrared 750 nm UV illuminations, fast response and recovery time. It also has perfect stability and reliability, revealing n-type semiconducting behaviour of the tin oxide ultraviolet and infrared photodetecors as an excellent material not only for fabricating highly sensitive photodetecors but also valuable additives that provide new functionality in photodetecors, which will enable the development of high-performance photodetecors.
机译:氧化锡SnO_(2)在许多研究领域中都有潜在的应用。使用化学气相沉积CVD方法,大规模合成了高质量的单晶SnO_(2)纳米线(NW)。通过将单个纳米线简单地转移到Pt叉指电极上,即可制造出基于SnO_(2)纳米线的紫外光电探测器。在对375 nm紫外线和750 nm红外紫外线的高灵敏度,快速响应和恢复时间方面,该光电探测器表现出出色的光电导性能。它还具有完美的稳定性和可靠性,揭示了氧化锡紫外和红外光电检测器的n型半导体性能,不仅是制造高灵敏度光电检测器的极好材料,而且是在光电检测器中提供新功能的有价值的添加剂,这将有助于开发新型的光电检测器。高性能光电探测器。

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